Narrow-band-gap N-type organic semiconductor material and preparation method and application thereof
The invention provides a brand-new, simple and efficient N-type organic semiconductor derivative material as shown in the formula I and a preparation method and application thereof, a corresponding intermediate is also prepared, and the N-type organic semiconductor derivative material synthesized by...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The invention provides a brand-new, simple and efficient N-type organic semiconductor derivative material as shown in the formula I and a preparation method and application thereof, a corresponding intermediate is also prepared, and the N-type organic semiconductor derivative material synthesized by utilizing the intermediate can realize a lower band gap and can be used for preparing a novel organic semiconductor material. And thus, better performance can be obtained in a photoelectric functional device. # imgabs0 #
本发明提供了一种全新的且简单高效的如下式I所示N型有机半导体衍生物材料及其制备方法和应用，并且还制备了相应的中间体，利用该中间体合成的N型有机半导体衍生物材料可实现更低的带隙，进而能够在光电功能器件中获得更优的性能表现。#imgabs0# |
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