Method for producing optoelectronic semiconductor component and optoelectronic semiconductor component

The invention relates to a method for producing an optoelectronic semiconductor component (1), comprising the following steps: A) providing a semiconductor body (10), which comprises, in succession in a vertical direction (Y), a first layer (101) of a first conductivity type, an active layer (103) designed as a quantum well structure for emitting electromagnetic radiation, and a second layer (102) of a second conductivity type; and B) irradiating the semiconductor body (10) with focused electromagnetic radiation (E) in such a way that a focal region (E1) of the electromagnetic radiation (E) lies within the active layer (103) and overlaps the quantum well structure, the electromagnetic radiation (E) having an intensity which is sufficiently large in the focal region (E1) in order to cause a point defect (201) in the quantum well structure, such that a defect region (20) is formed, and the generation of the point defect (201) is limited to the focus area (E1). The invention further relates to an optoelectronic