Semiconductor device and level shift circuit

The embodiment of the invention provides a semiconductor device and a level shift circuit. The semiconductor device includes a plurality of transistors formed in a substrate, a front side power rail disposed on a front side of the substrate, and a back side power rail disposed on a back side of the substrate. The transistor forms a first cell operating at least at a first power supply voltage and a second cell operating at a second power supply voltage different from the first power supply voltage. The front-side power rail provides a first power supply voltage to the first cell, and the back-side power rail provides a second power supply voltage to the second cell. 本申请的实施例提供了一种半导体器件和电平移位电路，半导体器件包括形成在衬底中的多个晶体管、设置在衬底前侧上的前侧电源轨和设置在衬底背侧上的背侧电源轨。晶体管形成至少在第一电源电压下工作的第一单元和在不同于第一电源电压的第二电源电压下工作的第二单元。前侧电源轨向第一单元提供第一电源电压，背侧电源轨向第二单元提供第二电源电压。