Power semiconductor device, power semiconductor chip and manufacturing method thereof

The invention relates to a power semiconductor device, a power semiconductor chip and a manufacturing method thereof. The power semiconductor device includes a gate electrode recessed from a first surface of a semiconductor substrate to a second surface of the semiconductor substrate disposed opposite to the first surface; an emitter region including an impurity of the first conductivity type, the emitter region being disposed in contact with the trench provided with the gate electrode and the first surface; a collector region including impurities of a second conductivity type opposite to the first conductivity type, the collector region being disposed in contact with the second surface; a floating region including an impurity of a second conductivity type, the floating region extending toward the second surface along an extension direction of the trench while surrounding a bottom surface of the trench; and a trench emitter region inserted under the gate electrode in the trench. 本公开涉及功率半导体器件、功率半导体芯片及其制造方法。该功率