Preparation method of nano silicon carbide abrasive

The invention discloses a preparation method of a nano silicon carbide abrasive material, which comprises the following steps: preparing silicon carbide nano particles through carbon thermal reduction by taking biomass carbon as a carbon source, tetraethoxysilane as a silicon source and ferric nitrate as a catalyst, pickling the silicon carbide nano particles, and tempering at 1000-1200 DEG C to obtain the nano silicon carbide abrasive material, the biomass carbon is obtained by carrying out high-temperature carbonization on a dry biomass raw material. The prepared nano silicon carbide abrasive material is good in grinding performance, capable of achieving a high polishing rate and suitable for a semiconductor mechanical grinding and polishing process, and the preparation process is low in energy consumption and low in cost. 本发明公开了一种纳米碳化硅磨料的制备方法，包括以生物质碳为碳源，正硅酸乙酯为硅源，硝酸铁为催化剂，通过碳热还原制备出碳化硅纳米颗粒，对所述碳化硅纳米颗粒进行酸洗并在1000～1200℃下回火制得所述纳米碳化硅磨料，所述生物质碳是由干燥的生物质原料经过高温碳化得到。本发明制得的纳米碳化硅磨料磨削性能好，可达到较高的抛光速率，适用于半导体机械研磨抛光工艺，制备过程能耗低，成本