Semiconductor integrated circuit device

在CMOS栅阵列中，对应于信号输入单元和对应于电源电压输入单元的每个键合焊盘由多个导体层构成，而对应于将不被采用的输入/输出单元的每个键合焊盘(未连接的焊盘)例如由最上层导体层构成。所以，与信号键合焊盘和电源电压键合焊盘相比，对应于将不被采用的输入/输出单元的每个键合焊盘(不连接的焊盘)其下的绝缘膜的厚度变得较厚，其与半导体衬底间的距离较远。 In a CMOS gate array, each of bonding pads corresponding to input cells for signals and bonding pads corresponding to input cells for supply voltages is formed of a plurality of conductor layers, whereas each of bonding pads (non-connected pads) corresponding to input/output cells not to be used is formed of, for example, the uppermost conductor layer. Thus, the bonding pad (non-connected pad) corresponding to the input/output cell not to be used becomes greater in the thickness of an underlying insulator film and longer in its spacing from a semiconductor substrate in comparison with each of the bonding pad for the signal and the bonding pad for the supply voltage.