Method for testing stress robustness of semiconductor substrate

The method for testing the stress robustness of the semiconductor substrate comprises the following steps: forming a nitride layer on the surface of the semiconductor substrate; patterning the nitride layer into a patterned nitride by lithography including a step of reactive ion etching with ions generated by a gas including hydrogen or a hydrogen compound, or both; processing the patterned nitride and the semiconductor substrate at a temperature not lower than 800 DEG C and not higher than 1300 DEG C to induce formation of dislocations at an interface between the patterned nitride and the semiconductor substrate; and evaluating at least one characteristic associated with the formed dislocation. 用于测试半导体衬底的应力鲁棒性的方法，包括：在半导体衬底的表面上形成氮化物层；通过光刻将氮化物层图案化为图案化的氮化物，所述光刻包括利用由包括氢或氢化合物或者两者的气体产生的离子进行反应离子蚀刻的步骤；在不低于800℃且不高于1300℃的温度下处理所述图案化的氮化物和所述半导体衬底，以在所述图案化的氮化物与所述半导体衬底之间的界面处诱发位错的形成；以及评估与所形成的位错相关的至少一种特性。