NONVOLATILE MEMORY ELEMENT

A non-volatile memory device includes at least one memory cell including a substrate, a stack structure, a tunneling dielectric layer, a floating gate, a control gate structure, and an erase gate structure. The stack structure is disposed on the substrate and includes a gate dielectric layer, an auxiliary gate, and an insulating layer stacked in sequence. The tunneling dielectric layer is located on the substrate on one side of the stacked structure. The floating gate is disposed on the tunneling dielectric layer and includes an uppermost edge and a curved sidewall. The control gate structure covers the curved side wall of the floating gate. The erase gate structure covers the floating gate and the control gate structure, and the uppermost edge of the floating gate is embedded into the erase gate structure. 本发明公开一种非挥发性内存元件，包括至少一个内存单元，内存单元包括衬底、堆叠结构、穿隧介电层、浮置闸极、控制闸极结构和抹除闸极结构。堆叠结构设置在衬底上，并且包括依序堆叠的闸极介电层、辅助闸极和绝缘层。穿隧介电层位于堆叠结构一侧的衬底上。浮置闸极设置在穿隧介电层上，并包括最上边缘和曲面侧壁。控制闸极结构覆盖浮置闸极的曲面侧壁。抹除闸极结构覆盖浮置闸极和控制闸极结构，且浮置闸极的最上边缘被嵌入至抹除闸极结构中