Wide bandgap semiconductor device and method of manufacture

A wide bandgap semiconductor device (100) is presented. A wide bandgap semiconductor device (100) includes a semiconductor body (102) having a first surface (104) and a second surface (106) opposite the first surface (104) along a vertical direction (y). The wide bandgap semiconductor device (100) further includes a first region (108) of the first conductivity type at least partially adjoining the first surface (104), a drift region (110) of the second conductivity type, a highly doped second region (112) adjoining the second surface (106). The wide bandgap semiconductor device (100) further includes a buffer region (114) of the second conductivity type arranged between the drift region (110) and the highly doped second region (112). The vertical profile of the doping concentration (c) of the buffer region (114) comprises at least one step (116) in the first section (1141) and increases approximately exponentially towards the second surface (106) in the second section (1442). The first section (1141) is arran