Semiconductor chip
A semiconductor chip includes an active device and a passive device formed over a substrate. And a passivation layer covering the active device and the passive device. And a blocking structure surrounding the active device. The top cover layer forms a crossing blocking structure on the active device...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | HUA CHANGHUANG SONG JUNHAN LIN XICONG XU RONGHAO CAI XUXIAO |
| description | A semiconductor chip includes an active device and a passive device formed over a substrate. And a passivation layer covering the active device and the passive device. And a blocking structure surrounding the active device. The top cover layer forms a crossing blocking structure on the active device. The cap layer has an opening exposing the blocking structure.
本发明提供了一种半导体芯片包括：有源装置及无源装置形成于基板之上。钝化层，覆盖有源装置及无源装置。阻挡结构，围绕有源装置。顶盖层，于有源装置上形成横跨阻挡结构。顶盖层具有开口露出阻挡结构。 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN116895610A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN116895610A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN116895610A3</originalsourceid><addsrcrecordid>eNrjZBAKTs3NTM7PSylNLskvUkjOyCzgYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhmYWlqZmhgaOxsSoAQAIQiAm</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor chip</title><source>esp@cenet</source><creator>HUA CHANGHUANG ; SONG JUNHAN ; LIN XICONG ; XU RONGHAO ; CAI XUXIAO</creator><creatorcontrib>HUA CHANGHUANG ; SONG JUNHAN ; LIN XICONG ; XU RONGHAO ; CAI XUXIAO</creatorcontrib><description>A semiconductor chip includes an active device and a passive device formed over a substrate. And a passivation layer covering the active device and the passive device. And a blocking structure surrounding the active device. The top cover layer forms a crossing blocking structure on the active device. The cap layer has an opening exposing the blocking structure.
本发明提供了一种半导体芯片包括：有源装置及无源装置形成于基板之上。钝化层，覆盖有源装置及无源装置。阻挡结构，围绕有源装置。顶盖层，于有源装置上形成横跨阻挡结构。顶盖层具有开口露出阻挡结构。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231017&DB=EPODOC&CC=CN&NR=116895610A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25568,76551</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231017&DB=EPODOC&CC=CN&NR=116895610A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HUA CHANGHUANG</creatorcontrib><creatorcontrib>SONG JUNHAN</creatorcontrib><creatorcontrib>LIN XICONG</creatorcontrib><creatorcontrib>XU RONGHAO</creatorcontrib><creatorcontrib>CAI XUXIAO</creatorcontrib><title>Semiconductor chip</title><description>A semiconductor chip includes an active device and a passive device formed over a substrate. And a passivation layer covering the active device and the passive device. And a blocking structure surrounding the active device. The top cover layer forms a crossing blocking structure on the active device. The cap layer has an opening exposing the blocking structure.
本发明提供了一种半导体芯片包括：有源装置及无源装置形成于基板之上。钝化层，覆盖有源装置及无源装置。阻挡结构，围绕有源装置。顶盖层，于有源装置上形成横跨阻挡结构。顶盖层具有开口露出阻挡结构。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAKTs3NTM7PSylNLskvUkjOyCzgYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhmYWlqZmhgaOxsSoAQAIQiAm</recordid><startdate>20231017</startdate><enddate>20231017</enddate><creator>HUA CHANGHUANG</creator><creator>SONG JUNHAN</creator><creator>LIN XICONG</creator><creator>XU RONGHAO</creator><creator>CAI XUXIAO</creator><scope>EVB</scope></search><sort><creationdate>20231017</creationdate><title>Semiconductor chip</title><author>HUA CHANGHUANG ; SONG JUNHAN ; LIN XICONG ; XU RONGHAO ; CAI XUXIAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN116895610A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HUA CHANGHUANG</creatorcontrib><creatorcontrib>SONG JUNHAN</creatorcontrib><creatorcontrib>LIN XICONG</creatorcontrib><creatorcontrib>XU RONGHAO</creatorcontrib><creatorcontrib>CAI XUXIAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HUA CHANGHUANG</au><au>SONG JUNHAN</au><au>LIN XICONG</au><au>XU RONGHAO</au><au>CAI XUXIAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor chip</title><date>2023-10-17</date><risdate>2023</risdate><abstract>A semiconductor chip includes an active device and a passive device formed over a substrate. And a passivation layer covering the active device and the passive device. And a blocking structure surrounding the active device. The top cover layer forms a crossing blocking structure on the active device. The cap layer has an opening exposing the blocking structure.
本发明提供了一种半导体芯片包括：有源装置及无源装置形成于基板之上。钝化层，覆盖有源装置及无源装置。阻挡结构，围绕有源装置。顶盖层，于有源装置上形成横跨阻挡结构。顶盖层具有开口露出阻挡结构。</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN116895610A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor chip |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T01%3A10%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HUA%20CHANGHUANG&rft.date=2023-10-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN116895610A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |