Plasma processing apparatus

The plasma processing apparatus of the present invention comprises: a plasma processing chamber; a substrate support part; a baffle structure including an upper side baffle having a plurality of first openings each having a first width and a lower side baffle having a plurality of second openings each having an upper side opening portion having a second width larger than the first width and a lower side opening portion having a second width larger than the lower width, the lower side opening portion has a third width smaller than the first width; and a bush structure including an inner cylindrical bush having a plurality of third openings, each having a fourth width, and an outer cylindrical bush having a plurality of fourth openings, each having an inner opening portion and an outer opening portion, each having a first width and a second width, the inner opening portion has a fifth width larger than the fourth width, and the outer opening portion has a sixth width smaller than the fourth width. 本发明的等离子体处理装置包