Surface treatment composition, surface treatment method, and method for producing semiconductor substrate

The invention relates to a surface treatment composition, a surface treatment method, and a method for manufacturing a semiconductor substrate. Provided is a solution that makes it possible to sufficiently remove residues remaining on the surface of a polished object containing silicon nitride and at least one substance selected from the group consisting of silicon oxide and polycrystalline silicon. A surface treatment composition which contains a nitrogen-free nonionic polymer, a nitrogen-containing nonionic polymer, and an anionic polymer, and wherein: the weight-average molecular weight of the nitrogen-free nonionic polymer is less than 100,000; the ratio of the weight-average molecular weight of the nitrogen-containing nonionic polymer to the weight-average molecular weight of the nitrogen-free nonionic polymer (nitrogen-containing nonionic polymer/nitrogen-free nonionic polymer) is 0.1-10, and the pH of the surface treatment composition is less than 7.0. 本发明涉及表面处理组合物、表面处理方法和半导体基板的制造方法。提供：能充分去除残留于研磨完的研磨对象