Method for increasing average thermoelectric figure of merit of n-type Mg3Sb2-based thermoelectric semiconductor

The invention discloses a method for improving the average thermoelectric figure of merit of an n-type Mg3Sb2-based thermoelectric semiconductor, and the method comprises the steps: mixing a material with a high doping electron concentration and a chemical element composition of Mg < 3.2-x > Zr < x > Sb < 1.5 > Bi < 0.5-y > Tey with a material with a low intrinsic electron concentration and a chemical element composition of Mg < 3.2 > Sb < 1.5 > Bi < 0.5 >, and carrying out sintering, thereby achieving a modulation doping technology in an Mg3Sb2-based bulk material, the influence of ionization impurity scattering on electron migration is effectively reduced, the electron mobility is greatly improved, the thermoelectric performance of a low-temperature region is improved, the electrical performance of the material is optimized, the average thermoelectric figure of merit of the material is integrally improved, and the application prospect is wide. 本发明公开了一种提升n型Mg3Sb2基热电半导体平均热电优值的方法，通过具有高掺杂电子浓度的化学元素组成为Mg3.2-xZrxS