VCSEL chip preparation method and VCSEL chip

The invention belongs to the technical field of semiconductors, and particularly relates to a preparation method of a VCSEL chip, which comprises the steps of forming an epitaxial structure of a semiconductor, and the epitaxial structure sequentially comprises a substrate layer, an N-DBR layer, an active region, a P-DBR layer and a highly doped layer from bottom to top; depositing and forming a passivation layer for protecting the epitaxial structure from being influenced by water vapor in the environment on the highly doped layer; etching a part of the passivation layer to expose a part of the highly doped layer, then depositing a P-type electric contact layer, and forming an electric conduction pattern on the P-type electric contact layer; oxidizing the epitaxial structure to form a light emitting hole; and grinding and thinning the epitaxial structure, and depositing at the bottom of the substrate layer to form an N-type electric contact layer. 本申请属于半导体技术领域，具体为一种VCSEL芯片的制备方法，包括形成半导体的外延结构，且所述外延结构自下而上依次包括衬底层