Back silicon corrosion processing method of silicon-based wafer
The invention relates to a back silicon corrosion processing method of a silicon-based wafer, which comprises the following steps of: installing the silicon-based wafer on a corrosion-resistant carrier, and exposing the back of the silicon-based wafer on the surface of the corrosion-resistant carrie...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a back silicon corrosion processing method of a silicon-based wafer, which comprises the following steps of: installing the silicon-based wafer on a corrosion-resistant carrier, and exposing the back of the silicon-based wafer on the surface of the corrosion-resistant carrier; soaking the corrosion-resistant carrier in a mixed acid solution, oxidizing the surface of the silicon-based wafer by using the mixed acid solution, and forming silicon dioxide on the surface of the silicon-based wafer; taking out the corrosion-resistant carrier from the mixed acid solution, and cleaning the silicon-based wafer; soaking the corrosion-resistant carrier in an oxidation reaction solution, wherein the oxidation reaction solution comprises ammonium fluoride and hydrogen peroxide; the corrosion-resistant carrier is taken out of the oxidation reaction liquid and put into corrosive liquid to be soaked so as to dissolve the silicon dioxide, and the corrosive liquid comprises ammonium fluoride and hydrofl |
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