Memory device

A memory device includes first and second chips contacting each other on a first surface divided into a first region, a second region, and a third region. The first chip includes: a substrate including a first diffusion region of a first conductivity type and a second diffusion region of a second conductivity type; a first electrode unit including a continuous conductor; and a second electrode unit. The second chip comprises a first interconnection layer; a third electrode unit; a fourth electrode unit; a first wall unit including a continuous conductor; and a second wall unit. Each of a first ratio of an area covered by the first electrode unit and the second electrode unit to the second region and a second ratio of an area covered by the third electrode unit and the fourth electrode unit to the second region is 3% to 40%. 一种存储器装置包含：第一、第二芯片，其在被划分为第一区域、第二区域及第三区域的第一表面上彼此接触。所述第一芯片包含：衬底，其包含第一导电类型的第一扩散区域及第二导电类型的第二扩散区域；第一电极单位，其包含连续导体；及第二电极单位。所述第二芯片包含：第一互连层；第三电极单位；第四电极单位；第一壁单位，其包含连续导体；及第二壁单位。由所述第一电极单位及所述第二电极单位覆盖的面积