Super junction Schottky diode based on multilayer groove etching and preparation method thereof

The invention discloses a super-junction Schottky diode based on multilayer groove etching. The super-junction Schottky diode comprises an ohmic contact cathode, an N + substrate layer, an N-type silicon carbide epitaxial base layer, at least one N-type silicon carbide epitaxial layer and a Schottky contact anode which are sequentially arranged from bottom to top, the N-type silicon carbide epitaxial base layer is provided with a bottom layer groove; each N-type silicon carbide epitaxial layer is provided with a groove, the groove penetrates through the N-type silicon carbide epitaxial layer in the direction from a groove opening to the groove bottom, the inner wall of the groove and the inner wall of the bottom-layer groove are located on the same plane, and the inner side walls of the groove and the bottom-layer groove are covered with a first P-type ion implantation doping region; the grooves and the bottom layer grooves are filled with dielectric layers, and the depth of the grooves is 5-10 microns. The i