In-memory computing circuit based on nonvolatile memory

The invention provides an in-memory computing circuit based on a nonvolatile memory, which is characterized in that each storage column in a nonvolatile memory series array performs multiplication and accumulation operation under the control of a time domain controller according to a received input...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ZHANG YUE, ZHAO WEISHENG, ZHANG BOJUN, GU ZHENGKUN, WANG JINKAI
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention provides an in-memory computing circuit based on a nonvolatile memory, which is characterized in that each storage column in a nonvolatile memory series array performs multiplication and accumulation operation under the control of a time domain controller according to a received input signal to generate a voltage rise signal; the input signal comprises a write input signal and a calculation input signal; the voltage time domain conversion circuit performs voltage time domain conversion to generate a time domain signal under the control of the time domain controller according to the received voltage rise signal; the pulse counting dynamic selection circuit generates a periodic square wave signal under the control of the time domain controller according to a received input signal and a time domain signal; the counting shift circuit generates a binary multiplication accumulation calculation result under the control of the time domain controller according to the received periodic square wave signal;