Preparation method of indium-doped beta-phase gallium oxide film with self-assembled hole structure

The invention belongs to the field of semiconductor thin film material preparation, and particularly discloses a preparation method of an indium-doped beta-phase gallium oxide thin film with a self-assembly hole structure, which comprises the following steps: firstly, carrying out evaporation coating on a substrate by using an electron beam evaporation coating machine and taking gallium oxide and indium oxide particles as evaporation materials; a sandwich structure is formed according to the vapor deposition sequence of gallium oxide, indium oxide and gallium oxide, and then the annealing temperature of the film is controlled in the nitrogen atmosphere to obtain the beta-phase gallium oxide film with different hole sizes and densities. The obtained indium-doped beta-phase gallium oxide thin film with the self-assembled hole structure is high in crystallinity, good in film forming quality and excellent in optical performance. 本发明属于半导体薄膜材料制备领域，具体公开了一种具有自组装孔洞结构掺铟β相氧化镓薄膜的制备方法，本发明首先使用电子束蒸发镀膜机以氧化镓和氧化铟颗粒为蒸发料在衬底上进行蒸发