Transition layer for C/SiC composite material substrate film sensor and preparation method thereof

The invention belongs to the technical field of thin film sensor design and production, and particularly relates to a transition layer for a C/SiC composite material substrate thin film sensor and a preparation method of the transition layer. A Zr element in a ZrC thin film is diffused towards a C/SiC composite material substrate under the diffusion action of the Zr element in a high-temperature environment to form a ZrxC1-x amorphous ceramic phase with the Zr content gradually reduced and the C content gradually increased from top to bottom, the ZrxC1-x amorphous ceramic phase serves as a gradient ceramic layer, and transition from the low thermal expansion coefficient of the C/SiC composite material to the high thermal expansion coefficient of ZrC is achieved. ZrSi2 is oxidized at the high temperature of 1400 DEG C or above, the self-repairing effect of SiO2-ZrSiO4 glass phase ceramic is generated, cavities and microcracks generated in the high-temperature oxidation process of the ZrSi2 film are repaired, t