Semiconductor structure and manufacturing method thereof

The embodiment of the invention relates to the field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof.The semiconductor structure comprises a substrate and a gate oxide layer located on the surface of the substrate; the gate stack layer is located on the surface of the gate oxide layer; the isolation layer at least covers the first side wall of the gate stack layer; the contact structure is at least located on the surface of the substrate; the dielectric layer is at least located between the contact structure and the second side wall of the gate stack layer, the first side wall and the second side wall are oppositely arranged, and the thickness of the dielectric layer is smaller than that of the isolation layer. At least the breakdown difficulty of the fuse structure can be reduced. 本公开实施例涉及半导体领域，提供一种半导体结构及其制作方法，其中，半导体结构包括：基底，以及位于基底表面的栅氧层；栅极堆叠层，栅极堆叠层位于栅氧层的表面；隔离层，隔离层至少覆盖栅极堆叠层的第一侧壁；接触结构，接触结构至少位于基底的表面；介质层，介质层至少位于接触结构与栅极堆叠层的第二侧壁之间，第一侧壁与第二侧壁相对设置，介质层的厚度小于隔离层的厚度。至少可以降低熔丝结构