SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

The invention relates to a semiconductor device and a manufacturing method thereof. The pre-cleaning techniques described herein can be used to remove native oxides and/or other contaminants from the semiconductor device, such a way of removal can reduce the likelihood of truncation, clipping, and/or sidewall spacer thickness reduction. As described herein, a protection layer is formed on a cap layer over a gate structure of a transistor. A pre-wash operation is then performed to remove native oxide from a top surface of the source/drain region of the transistor. In the pre-cleaning operation, the material of the protective layer instead of the cap layer is consumed. As such, the use of the protective layer reduces the likelihood of removing material from the cap layer and/or reduces the amount of material removed from the cap layer during the pre-cleaning operation. 本案涉及一种半导体装置及其制造方法。本案描述的预清洗技术可用以从半导体装置去除原生氧化物及/或其它污染物，这样的去除方式能降低截断、剪断及/或侧壁间隔物厚度减小的可能性。如本案所述，保护层形成在位于晶体管的栅极结构上方的盖层上。然后执行预清洗操作以从晶体管的源极/漏极区的顶表面去除原生氧