Manufacturing method of IGBT device and IGBT device

The invention provides a manufacturing method of an IGBT (Insulated Gate Bipolar Translator) device and the IGBT device. The manufacturing method comprises the following steps: providing a first silicon wafer and a second silicon wafer; manufacturing a metal oxide semiconductor field effect transistor (MOSFET) on the front surface of the first silicon wafer (IGBT front surface process), and depositing an interlayer dielectric layer; and depositing a second hard mask on the front surface of the second silicon wafer, and bonding the front surface of the first silicon wafer and the front surface of the second silicon wafer. According to the manufacturing method of the IGBT device provided by the invention, after the first silicon wafer and the second silicon wafer are bonded, the back surface process of the first silicon wafer is carried out, and the first silicon wafer is not a thin sheet at the moment, so that the IGBT device can be thinner. The thinner IGBT device can effectively solve the heat dissipation pr