Ultrahigh-thermal-conductivity low-dielectric interface material and preparation method thereof
The invention relates to the technical field of heat-conducting interface materials, in particular to an interface material with ultrahigh heat conductivity and low dielectric constant and a preparation method thereof, and the interface material is prepared from the following raw materials in parts...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to the technical field of heat-conducting interface materials, in particular to an interface material with ultrahigh heat conductivity and low dielectric constant and a preparation method thereof, and the interface material is prepared from the following raw materials in parts by weight: an organic silicon polymer, oxygen-containing silicone oil, cubic boron nitride, diamond, reinforcing powder, a platinum catalyst and a silane coupling agent. The organic silicon polymer and the oxygen-containing silicone oil are crosslinked under the catalysis of the platinum catalyst to form an organic silicon elastic matrix of a net structure, then the reinforcing powder is added to increase the strength of the matrix, the cubic boron nitride and the diamond are compounded and laid on the organic silicon elastic matrix layer by layer in the thickness direction, and the composite material is obtained. The cubic boron nitride and the diamond are tightly arranged through calendaring, so that the ultrahig |
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