Magnetic storage device

An embodiment provides a magnetic memory device having improved resistance to an external magnetic field. A magnetic memory device according to an embodiment includes a magnetoresistive effect element. The magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a laminate, a first non-magnetic layer, a second non-magnetic layer, and a third non-magnetic layer. The laminated body is provided on the opposite side from the first ferromagnetic layer with respect to the second ferromagnetic layer. The first nonmagnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer. The second nonmagnetic layer is provided between the second ferromagnetic layer and the laminate. The third non-magnetic layer is provided on the opposite side from the second non-magnetic layer with respect to the laminate, and contains a metal oxide. The laminate is in contact with the third non-magnetic layer and includes a fourth non-magnetic layer containing pl