Bigate power semiconductor device and method of controlling bigate power semiconductor device

A dual-gate power semiconductor device and a method of controlling a dual-gate power semiconductor device are disclosed. A power semiconductor device (1) presents an IGBT configuration and comprises: a semiconductor body (10) coupled to a first load terminal (11) and a second load terminal (12); an active region (1-2) having a first section (1-21) and a second section (1-22), both the first section (1-21) and the second section (1-22) being configured to conduct a load current between the first load terminal (11) and the second load terminal (12); a plurality of first control electrodes (141) and a plurality of second control electrodes electrically isolated from the first load terminal (11) and the second load terminal (12), the plurality of first control electrodes (141) in the first section (121) and the plurality of second control electrodes in both the first section (121) and the second section (1-22); and a plurality of semiconductor channel structures extending in the semiconductor body (10) in both th