Electrostatic discharge protection device

An electrostatic discharge protection device includes a semiconductor substrate, a gate structure, a source doped region, a drain doped region, a plurality of source silicide patterns, and a plurality of drain silicide patterns. The gate structure is disposed on the semiconductor substrate. The source doped region and the drain doped region are disposed in the semiconductor substrate and are respectively located on two opposite sides of the gate structure in the first direction. The source silicide patterns are disposed on the source doped region, and the plurality of source silicide patterns are arranged along the second direction and are separated from each other. The drain silicide patterns are disposed on the drain doped region, and the plurality of drain silicide patterns are arranged along the second direction and are separated from each other. The plurality of source silicide patterns and the plurality of drain silicide patterns are arranged in a staggered manner in the first direction. 本发明公开一种静电放电保护装置