Insulated gate bipolar transistor (IGBT) driving device

The embodiment of the invention discloses an insulated gate bipolar transistor (IGBT) driving device. The IGBT driving device comprises a control circuit and an output circuit, the output end of the control circuit is connected with the input end of the output circuit; the output circuit comprises a switch, a transformer and at least two output branches; the transformer is connected with the at least two output branches; wherein the control circuit is used for periodically inputting a pulse signal to the output circuit based on an input voltage; the output circuit is used for controlling the switch to be in an on state or an off state according to the pulse signal; and under the condition that the switch is in a conducting state, the voltage input to the transformer is output to the at least two output branches. 本申请实施例公开了一种绝缘栅双极型晶体管(IGBT)驱动装置，所述IGBT驱动装置包括：控制电路和输出电路；所述控制电路的输出端与所述输出电路的输入端连接；所述输出电路包括开关、变压器和至少两路输出支路；所述变压器与所述至少两路输出支路连接；其中，所述控制电路，用于基于输入电压向所述输出电路周期性输入脉冲信号；所述输出电路，用于根据所述脉冲信号控制所述开关处于导通状态或断开状态；在所述开关处于导通