Memory, data destruction method and electronic equipment

The invention provides a memory, a data destruction method and electronic equipment. The memory is provided with a plurality of memory units, and each memory unit is composed of two electrodes and a switch layer. The switch layer is composed of at least one of simple substances such as Te and Se and materials such as chalcogenide. The two electrodes are superposed on the switch layer, so that Schottky barrier characteristics are respectively presented between the two electrodes and the switch layer. When voltage is applied to the two electrodes and the voltage exceeds the voltage of the barrier height, the path between the two electrodes is conducted. When the voltage is stopped from being applied to the two electrodes, the voltage between the two electrodes is gradually reduced due to the relaxation effect of the material of the switch layer, and when the voltage between the two electrodes is reduced to be lower than the potential barrier height, the access between the two electrodes is disconnected. And if