Three-dimensional memory structure and circuit

A three-dimensional memory structure includes: a memory array including first and second sub-arrays respectively having a first select line, a plurality of word lines, and a second select line; a connection structure including a plurality of connection regions, in which an extension structure of at least one of the first selection line, the plurality of word lines, and the second selection line is coupled to a corresponding connection region among the plurality of connection regions; the transmission gate group is arranged below the connecting structure and between the first subarray and the second subarray, the transmission gate group comprises a plurality of transmission gates, and the plurality of transmission gates are respectively coupled to the corresponding plurality of connecting areas; and the driving circuit is coupled to the transmission gate group and is arranged below the connecting structure. 本发明公开一种三维存储器结构，包括：存储器阵列，包括第一与第二子阵列，分别具有第一选择线、多条字线与第二选择线；连接结构，包括多个连接区域，其中第一选择线、多条字线与第二选择线的至少其中之一的延伸结构耦接到多