High-efficiency heterojunction solar cell and manufacturing method thereof

The invention discloses an efficient heterojunction solar cell and a manufacturing method thereof. The cell comprises an N-type silicon wafer, a first intrinsic amorphous silicon layer, an N-type doped layer, a front transparent conductive layer and a front metal grid line layer, wherein the first i...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ZENG QINGHUA, ZHUANG HUIHU, ZHANG JINYAN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses an efficient heterojunction solar cell and a manufacturing method thereof. The cell comprises an N-type silicon wafer, a first intrinsic amorphous silicon layer, an N-type doped layer, a front transparent conductive layer and a front metal grid line layer, wherein the first intrinsic amorphous silicon layer, the N-type doped layer, the front transparent conductive layer and the front metal grid line layer are sequentially arranged on the front face of the silicon wafer. The second intrinsic amorphous silicon layer, the P-type doped layer, the back transparent conductive layer and the back metal grid line layer are sequentially arranged on the back of the silicon wafer; the N-type doped layer is of a composite layer structure and comprises an N-type amorphous silicon oxide layer and an N-type amorphous silicon layer; the P-type doped layer is of a composite layer structure and comprises a P-type amorphous silicon oxide layer and a P-type amorphous silicon layer. The N-type doped layer i