High-efficiency heterojunction solar cell and manufacturing method thereof

The invention discloses an efficient heterojunction solar cell and a manufacturing method thereof. The cell comprises an N-type silicon wafer, a first intrinsic amorphous silicon layer, an N-type doped layer, a transparent conducting layer and a metal grid line layer which are sequentially arranged...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ZENG QINGHUA, ZHUANG HUIHU, ZHANG JINYAN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses an efficient heterojunction solar cell and a manufacturing method thereof. The cell comprises an N-type silicon wafer, a first intrinsic amorphous silicon layer, an N-type doped layer, a transparent conducting layer and a metal grid line layer which are sequentially arranged on the front face of the silicon wafer, and a second intrinsic amorphous silicon layer, a P-type doped layer, a transparent conducting layer and a metal grid line layer which are sequentially arranged on the back face of the silicon wafer. The N-type doped layer or/and the P-type doped layer is/are of a multi-layer composite structure, namely the multi-layer composite structure comprises a seed layer, a microcrystalline silicon oxide layer and a microcrystalline silicon layer; the invention particularly discloses a manufacturing method of the N-type doped layer and the P-type doped layer of the multi-layer composite structure. The multi-layer composite structure has a relatively large optical band gap, so that the