Semiconductor device and manufacturing method thereof

Various embodiments of the present disclosure relate to a semiconductor device and a method of manufacturing the same. Disclosed herein is a technique for improving the performance of a semiconductor device having a trench gate type power MOSFET. Specifically, a method of manufacturing a semiconduct...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	OMIZU YUTO, ABIKO YUYA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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