Semiconductor device and manufacturing method thereof

Various embodiments of the present disclosure relate to a semiconductor device and a method of manufacturing the same. Disclosed herein is a technique for improving the performance of a semiconductor device having a trench gate type power MOSFET. Specifically, a method of manufacturing a semiconductor device having a trench gate type power MOSFET includes: forming a trench in a semiconductor substrate; introducing both a p-type impurity (boron) and carbon (C) into the bottom surface of the trench to form a p-type impurity introduction region; forming a gate electrode to fill the trench; forming a channel formation region and a source region at a side surface of the trench filling the gate electrode; and heat treating the p-type impurity introduction region to form an electric field relaxation layer having suppressed crystal defects and a controlled shape. 本公开的各种实施例涉及一种半导体器件及其制造方法。本文公开了一种用于提高具有沟槽栅型功率MOSFET的半导体器件的性能的技术。具体地，一种制造具有沟槽栅型功率MOSFET的半导体器件的方法，包括：在半导体衬底中形成沟槽；将p型杂质(硼)以及碳(C)均引入到沟槽的底表面中，以形成p型杂质引入区；形成栅电极以填充沟