ESC electrostatic chuck
The invention provides an ESC electrostatic chuck which comprises a first aluminum nitride ceramic surface layer, a tungsten electrode layer and a second aluminum nitride ceramic surface layer which are sequentially arranged, the tungsten electrode layer is of a two-piece layered structure which is...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides an ESC electrostatic chuck which comprises a first aluminum nitride ceramic surface layer, a tungsten electrode layer and a second aluminum nitride ceramic surface layer which are sequentially arranged, the tungsten electrode layer is of a two-piece layered structure which is arranged in a bilateral symmetry mode, dot protrusions with the diameter ranging from 40 nm to 60 nm are densely arranged on the surface of the first aluminum nitride ceramic surface layer, and the dot protrusions with the diameter ranging from 40 nm to 60 nm are arranged on the surface of the second aluminum nitride ceramic surface layer. According to the electrostatic chuck, the aluminum nitride ceramic material layer structure is adopted, the etching precision can be effectively improved in practical application, the problem that the product yield is not high is solved, and the electrostatic chuck can be widely applied to semiconductor etching machines and diffusion equipment.
本发明提供一种ESC静电卡盘,包括依次设置的第一氮化铝陶瓷面层、钨电极 |
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