Ultrathin BME ceramic dielectric capacitor prepared by step-by-step doping and preparation method thereof

The invention relates to an ultrathin BME ceramic dielectric capacitor prepared by step-by-step doping and a preparation method, the ultrathin BME ceramic dielectric capacitor is formed by overlapping and firing dielectric layers, each dielectric layer comprises a dielectric layer and an electrode printed on the dielectric layer, and the dielectric layer comprises the following raw materials: a coated BSCT main substrate and a liquid sintering aid; the coated BSCT main matrix comprises the following raw materials: a BSCT material, magnesium nitrate, manganese acetate, vanadyl oxalate and rare earth nitrate; the liquid sintering aid is composed of nanometer copper oxide, tetraethoxysilane and tributyl borate in proportion, targeted doping is carried out through step-by-step doping, a novel three-layer structure is formed, and good comprehensive performance is obtained. 一种分步掺杂制备的超薄BME瓷介电容器及制备方法，超薄BME瓷介电容器由介电层与介电层相互叠加烧制而成，所述介电层包括介质层和印刷在介质层上的电极，所述介质层包括以下原料：包覆BSCT主基体、液态助烧剂；包覆BSCT主基体包括以下原料：BSCT材料、硝酸镁、乙酸锰、草酸氧钒、硝酸稀土盐