MEMS silicon pressure sensor chip with PT resistor and sensor
The invention discloses an MEMS silicon pressure sensor chip with a PT resistor, and a sensor. The chip comprises a pressure-sensitive diaphragm, a PT resistor, and an MEMS chip. 2N discontinuous concave areas which are annularly and uniformly arranged are etched on the front surface of the pressure...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses an MEMS silicon pressure sensor chip with a PT resistor, and a sensor. The chip comprises a pressure-sensitive diaphragm, a PT resistor, and an MEMS chip. 2N discontinuous concave areas which are annularly and uniformly arranged are etched on the front surface of the pressure-sensitive diaphragm; adjacent gaps of the 2N discontinuous concave areas form N straight beams; a central circular island is formed in a middle area defined by the 2N discontinuous concave areas 3; n is a positive integer; four piezoresistors are symmetrically arranged on the same straight beam; the central circular island 4 is integrated with a PT resistor. According to the MEMS silicon pressure sensor, the PT resistor is integrated on the front surface structure of the chip, the temperature response is real-time and rapid, the result is real, the temperature compensation problem of the sensor under rapid temperature change can be solved, and the performance of the MEMS silicon pressure sensor can be improved.
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