Preparation method of electrochemical etching reduced graphene oxide film and application of electrochemical etching reduced graphene oxide film in supercapacitor

The invention belongs to the field of supercapacitor materials, and relates to a preparation method of an electrochemical etching reduced graphene oxide film and application of the electrochemical etching reduced graphene oxide film in the aspect of a supercapacitor. The method is used for solving the problems that in the self-stacking film forming process of reduced graphene oxide, graphene is prone to reagglomeration and stacking, and consequently the ion transmission rate and the ion accessible surface area of a reduced graphene oxide film are poor. According to the method, RGO serves as an anode, a platinum sheet serves as a cathode, a mixed solution of HNO3 and H2SO4 serves as electrolyte, electrochemical etching is carried out, and the etched reduced graphene oxide thin film is obtained. When the prepared reduced graphene oxide film is directly used as an electrode, the use of a binder, a current collector and a conductive agent is avoided, so that on one hand, the electronic conductivity of the electro