Semiconductor wafer cutting process

The invention relates to the technical field of semiconductor wafer manufacturing, and particularly discloses a semiconductor wafer cutting process which comprises the following steps: coating a polymer on the surface of a semiconductor wafer to enable the polymer to be tightly combined with the sur...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser:	SUO ZHEN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING COMPOSITIONS BASED THEREON CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING THEIR PREPARATION OR CHEMICAL WORKING-UP TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	The invention relates to the technical field of semiconductor wafer manufacturing, and particularly discloses a semiconductor wafer cutting process which comprises the following steps: coating a polymer on the surface of a semiconductor wafer to enable the polymer to be tightly combined with the surface of the wafer; a laser is used for irradiating a laser beam on the surface of the wafer, after the laser beam is absorbed by the polymer layer, the optical power of the laser beam is weakened, and hot spots generated by light beam conduction on the wafer are avoided; the laser beam cutting method has the advantages of being easy and convenient to operate, high in cutting precision and stable in process, the polymer solution for coating the semiconductor wafer is prepared to form the polymer protection layer, and high power of the laser beam is absorbed by the polymer protection layer; and two sides of the semiconductor wafer are filled with the polymer solution to accelerate heat dissipation and reduce wafer ho