SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM
According to the invention, the step covering performance of a film formed on a substrate with a groove can be improved. The method includes: (a) a step of supplying a raw material gas to a substrate from a side of the substrate having a recessed portion on a surface thereof; (b) a step of supplying...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | According to the invention, the step covering performance of a film formed on a substrate with a groove can be improved. The method includes: (a) a step of supplying a raw material gas to a substrate from a side of the substrate having a recessed portion on a surface thereof; (b) a step of supplying a reaction gas to the substrate; and a step for forming a film on the substrate by performing a predetermined number of times of non-simultaneous cycles of (a) and (b), in (a), by causing the raw material gas to collide with the inner wall of the recess, the raw material gas is decomposed to generate an intermediate and the intermediate is adhered to the inner wall of the recess, and in (b), the intermediate adhered to the inside of the recess is reacted with the reaction gas.
本发明能够改善在具有槽的基板上形成的膜的阶梯覆盖性能。具有:(a)从在表面具有凹部的基板的侧方对基板供给原料气体的工序;(b)对基板供给反应气体的工序;以及通过进行预定次数的非同时地进行(a)和(b)的循环,在基板上形成膜的工序,在(a)中,通过使原料气体与凹部内壁碰撞,使原料气体分解而产生中间体,并使中间体附着于凹部内壁,在(b)中,使附着于凹部内的中间体与反应气体发生反应。 |
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