Molybdenum (0) precursors for deposition of molybdenum films

Molybdenum (0) coordination complexes are described that comprise ligands that are each coordinated to the metal center via nitrogen or phosphorus. Methods for depositing a molybdenum-containing film on a substrate are described. The substrate is exposed to molybdenum precursors and reactants to for...

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Hauptverfasser: LEONI, ANDREA, DORIN DOMAIN PLAIN, MEHLMAN PAUL, DODVIK, NIEMJA, HAN YOUNG-HOON, GIOTTI, BASSKAR, SALI, MARCO
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:Molybdenum (0) coordination complexes are described that comprise ligands that are each coordinated to the metal center via nitrogen or phosphorus. Methods for depositing a molybdenum-containing film on a substrate are described. The substrate is exposed to molybdenum precursors and reactants to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures may be sequential or simultaneous. 描述了钼(0)配位络合物,所述钼(0)配位络合物包含配体,所述配体各自通过氮或磷配位到金属中心。描述了用于在基板上沉积含钼膜的方法。将所述基板暴露于钼前驱物和反应物以形成所述含钼膜(例如,元素钼、氧化钼、碳化钼、硅化钼、氮化钼)。所述暴露可以是顺序的或同时的。