IGBT (Insulated Gate Bipolar Translator) with self-aligned trench gate structure

The invention relates to a self-aligned trench gate structure IGBT (Insulated Gate Bipolar Translator), which at least comprises a substrate (100), a second conduction type layer a (101) is arranged above the front surface of the substrate, at least one trench is arranged at the upper part of the substrate, the trench simultaneously penetrates through the second conduction type layer a (101) at the corresponding position, a first insulating medium layer (302) is arranged in the trench, and a second insulating medium layer (302) is arranged in the first insulating medium layer (302). A first conductive layer (201) is arranged in the first insulating dielectric layer (302), a second insulating dielectric layer (303) with the width larger than that of the first insulating dielectric layer (302) is arranged at the top of the first insulating dielectric layer (302), the second insulating dielectric layer (303) is etched to form a side wall, and the second insulating dielectric layer (303) plays a role of a mask in