SEMICONDUCTOR DEVICE INCLUDING MACROCELL

A semiconductor device (10) includes a transistor (20). The transistor (20) includes a plurality of macro cells (151, 152), the plurality of macro cells (151, 152) including a first macro cell (151) and a second macro cell (152). Each of the first and second macro cells includes a plurality of trenches (130) formed in the first major surface (110) of the semiconductor substrate (100), the trenches (130) patterning the semiconductor substrate (100) into mesas (160). The plurality of trenches (130) includes a conductive trench (131) in which a conductive material disposed in the conductive trench (131) is electrically connected to the terminal (180, 185). A majority of all the trenches (130) of the first macro cell (151) extend only in a first direction, and a majority of all the trenches (130) of the second macro cell (152) extend only in a second direction different from the first direction. The at least one first macro cell (151) is arranged adjacent to the at least one second macro cell (152). 半导体器件(10)包括晶体