Preparation method of ceramic aluminum-coated substrate and ceramic aluminum-coated substrate prepared by same
The invention discloses a preparation method of a ceramic aluminum-coated substrate and the ceramic aluminum-coated substrate prepared by the method, relates to the field of semiconductors, and aims to solve the problem of complex preparation of the ceramic aluminum-coated substrate. The technical s...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a preparation method of a ceramic aluminum-coated substrate and the ceramic aluminum-coated substrate prepared by the method, relates to the field of semiconductors, and aims to solve the problem of complex preparation of the ceramic aluminum-coated substrate. The technical scheme is characterized by comprising the following steps of: 1, adopting a CAPD (Cyclic Activated Polymorphism) process, taking a target material and an aluminum foil as double cathodes in a vacuum furnace, applying bias voltage on the aluminum foil, and carrying out heat treatment on the target material and the aluminum foil; the baffle shields the target material, glow discharge is generated after a power supply is switched on, argon is ionized into a plasma state, the aluminum foil is bombarded, and an oxide layer of the aluminum foil is broken and removed under argon ion bombardment; removing the baffle plate, taking a titanium target as a cathode, and depositing titanium sputtered by argon ion bombardment targ |
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