C, N and S co-doped TiO2/acid etched g-C3N4 heterojunction photocatalyst
The invention relates to a C, N and S co-doped TiO2/acid etching g-C3N4 heterojunction photocatalyst, and in the heterojunction photocatalyst, C, N and S co-doped TiO2 particles are deposited and covered on the surface of acid etching layered g-C3N4; the heterojunction photocatalyst has two micro/na...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a C, N and S co-doped TiO2/acid etching g-C3N4 heterojunction photocatalyst, and in the heterojunction photocatalyst, C, N and S co-doped TiO2 particles are deposited and covered on the surface of acid etching layered g-C3N4; the heterojunction photocatalyst has two micro/nano structures, namely layered g-C3N4 is micron-sized particles formed by stacking nano-sized g-C3N4 fragments formed by acid etching, and micron-sized particles which are approximately spherical and formed by secondary agglomeration of nano-sized C, N and S co-doped TiO2 particles. The heterojunction photocatalyst with excellent catalytic performance is prepared by adopting a one-step hydrothermal method, the heterojunction photocatalyst has excellent photocatalytic degradation activity and stable recycling degradation performance, the raw materials in the preparation method are cheap and easy to obtain, the preparation process is simple, and the heterojunction photocatalyst is suitable for industrial large-scale p |
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