SEMICONDUCTOR MEMORY DEVICE

The embodiment provides a semiconductor memory device with large capacity. According to one embodiment, a semiconductor memory device includes: a first electrode and a second electrode arranged in a first direction; and a phase change layer that is provided between the first electrode and the second electrode and contains at least one of germanium (Ge), antimony (Sb), and tellurium (Te). The phase change layer is configured so as to be capable of transition to a first state in which the volume ratio of the amorphous phase to the crystal phase is a first ratio, a second state in which the volume ratio is a second ratio greater than the first ratio, and a third state in which the volume ratio is a third ratio greater than the second ratio. 实施方式提供容量大的半导体存储装置。实施方式的半导体存储装置具备：在第一方向上排列的第一电极及第二电极；以及相变层，设置在第一电极与第二电极之间，包含锗(Ge)、锑(Sb)以及碲(Te)中的至少1种。相变层构成为能够转变为非晶相相对于晶体相的体积比率为第一比率的第一状态、所述体积比率为比第一比率大的第二比率的第二状态、以及所述体积比率为比第二比率大的第三比率的第三状态。