Bigate power semiconductor device and method of controlling bigate power semiconductor device

A dual-gate power semiconductor device and a method of controlling a dual-gate power semiconductor device are disclosed. A dual-gate IGBT (1) is proposed in which an active region (1-2) comprises a first section (121) and a second section (1-22). The two sections can be controlled by two control signals (13-21, 13-22). For example, the first section (1-21) presents a first characteristic transfer curve, the load current being dependent on the voltage of the first control signal (13-21), and the second section (1-22) presents a second characteristic transfer curve, the load current being dependent on the voltage of the first control signal (13-21), where at least the second characteristic transfer curve is variable based on the voltage of the second control signal (13-22). For a given voltage of the first control signal (13-21) corresponding to the forward conduction state of the power semiconductor device (1), a load current change observed for a given change in the voltage of the second control signal (13-22