Manufacturing method of low-carbon cluster gate oxide of SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device

The invention belongs to the technical field of semiconductors, and discloses a method for manufacturing low-carbon cluster gate oxide of a silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET) device, which comprises the following steps of: depositing a SiC epitaxial layer on a SiC substrate; carrying out ion implantation on the SiC epitaxial layer and carrying out high-temperature annealing; growing a Si epitaxial layer on the SiC epitaxial layer; growing a gate oxide SiO2 layer on the Si epitaxial layer by using a low-temperature thermal oxidation method; gate oxide polycrystalline silicon deposition is carried out on the gate oxide SiO2 layer; performing gate oxide pattern photoetching on the deposited gate oxide polycrystalline silicon; gate oxide polycrystalline silicon etching and gate oxide etching are carried out; according to the invention, the formation of the inferior structure of the carbon cluster on the interface of the gate oxide SiO2 and the SiC epitaxial layer in the