Spin-orbit torque magnetic memory circuit and layout thereof

The invention provides a spin-orbit torque magnetic memory circuit and a layout thereof, and the spin-orbit torque magnetic memory circuit comprises a read transistor pair, two read transistors connected in parallel, a write transistor pair, two write transistors connected in parallel, and a spin-or...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: GUO YOUCE, HUANG LIPING, WANG SHURU, WU YITING, ZENG JUNYAN, WANG RENYOU, WU JIARONG, HUANG JUNXIAN
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention provides a spin-orbit torque magnetic memory circuit and a layout thereof, and the spin-orbit torque magnetic memory circuit comprises a read transistor pair, two read transistors connected in parallel, a write transistor pair, two write transistors connected in parallel, and a spin-orbit torque magnetic memory unit. A read transistor pair having a source electrode and a source electrode, a write transistor pair having a source electrode, a read bit line, and a spin-orbit torque layer having one end connected to the source electrode of the read transistor pair and the other end connected to the spin-orbit torque layer, one end connected to the source line and the other end connected to the source electrode of the write transistor pair, a read bit line, and a read bit line. A read bit line is connected to the drain of the read transistor pair, and a write bit line is connected to the drain of the write transistor pair. 本发明提出了一种自旋轨道力矩磁性存储器电路与其布局,其中该自旋轨道力矩磁性存储器电路包含一读取晶体管对,具有两个并联的读取晶体管、一写入晶体管对,具有两个并