Spin-orbit torque magnetic memory circuit and layout thereof
The invention provides a spin-orbit torque magnetic memory circuit and a layout thereof, and the spin-orbit torque magnetic memory circuit comprises a read transistor pair, two read transistors connected in parallel, a write transistor pair, two write transistors connected in parallel, and a spin-or...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a spin-orbit torque magnetic memory circuit and a layout thereof, and the spin-orbit torque magnetic memory circuit comprises a read transistor pair, two read transistors connected in parallel, a write transistor pair, two write transistors connected in parallel, and a spin-orbit torque magnetic memory unit. A read transistor pair having a source electrode and a source electrode, a write transistor pair having a source electrode, a read bit line, and a spin-orbit torque layer having one end connected to the source electrode of the read transistor pair and the other end connected to the spin-orbit torque layer, one end connected to the source line and the other end connected to the source electrode of the write transistor pair, a read bit line, and a read bit line. A read bit line is connected to the drain of the read transistor pair, and a write bit line is connected to the drain of the write transistor pair.
本发明提出了一种自旋轨道力矩磁性存储器电路与其布局,其中该自旋轨道力矩磁性存储器电路包含一读取晶体管对,具有两个并联的读取晶体管、一写入晶体管对,具有两个并 |
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