Preparation method and application of double-defect 2D g-C3N4-x NSs photocatalytic material
The invention relates to preparation and application of a double-defect 2D g-C3N4-x NSs photocatalytic material. The preparation method comprises the following steps: calcining melamine in N2 atmosphere at 550 DEG C to form a bulk-phase graphite-phase carbon nitride (g-C3N4) precursor; placing the p...
Gespeichert in:
Hauptverfasser: | , , , , , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention relates to preparation and application of a double-defect 2D g-C3N4-x NSs photocatalytic material. The preparation method comprises the following steps: calcining melamine in N2 atmosphere at 550 DEG C to form a bulk-phase graphite-phase carbon nitride (g-C3N4) precursor; placing the precursor in a nitric acid solution, and adding hydrogen peroxide to obtain a suspension; performing ultrasonic treatment, stirring and standing on the turbid liquid to obtain modified g-C3N4; and placing the modified g-C3N4 in a muffle furnace, and calcining the modified g-C3N4 at 0-550 DEG C to obtain the double-defect type 2D g-C3N4-x NSs photocatalytic material. According to the present invention, the specific surface area of the bulk phase g-C3N4 is increased, the visible light utilization rate and the photon-generated carrier separation rate of the bulk phase g-C3N4 are effectively improved through the formation of the double defects, the good visible light catalytic activity is represented, and the rhodamine |
---|