Preparation method and application of double-defect 2D g-C3N4-x NSs photocatalytic material

The invention relates to preparation and application of a double-defect 2D g-C3N4-x NSs photocatalytic material. The preparation method comprises the following steps: calcining melamine in N2 atmosphere at 550 DEG C to form a bulk-phase graphite-phase carbon nitride (g-C3N4) precursor; placing the p...

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Hauptverfasser: REN YONGXIANG, ZUO KEQIAN, SHI WEIJUAN, DANG BOYUAN, CHI YANBIN, YANG LEI, XU MINYANG
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention relates to preparation and application of a double-defect 2D g-C3N4-x NSs photocatalytic material. The preparation method comprises the following steps: calcining melamine in N2 atmosphere at 550 DEG C to form a bulk-phase graphite-phase carbon nitride (g-C3N4) precursor; placing the precursor in a nitric acid solution, and adding hydrogen peroxide to obtain a suspension; performing ultrasonic treatment, stirring and standing on the turbid liquid to obtain modified g-C3N4; and placing the modified g-C3N4 in a muffle furnace, and calcining the modified g-C3N4 at 0-550 DEG C to obtain the double-defect type 2D g-C3N4-x NSs photocatalytic material. According to the present invention, the specific surface area of the bulk phase g-C3N4 is increased, the visible light utilization rate and the photon-generated carrier separation rate of the bulk phase g-C3N4 are effectively improved through the formation of the double defects, the good visible light catalytic activity is represented, and the rhodamine